SUPERCRITICAL DRYING METHOD OF SEMICONDUCTOR SUBSTRATE

Title:

SUPERCRITICAL DRYING METHOD OF SEMICONDUCTOR SUBSTRATE

Document Type and Number:

Japanese Patent JP2013055230

Kind Code:

A

Abstract:

To provide a supercritical drying method of a semiconductor substrate which inhibits a metal material and polysilicon on the semiconductor substrate from being etched and prevents the deterioration of electric characteristics of a semiconductor device.

A supercritical drying method of a semiconductor substrate includes the steps of: introducing the semiconductor substrate having a surface wetted with a water soluble organic solvent into a chamber after the semiconductor substrate is cleaned and rinsed; sealing the chamber and putting the water soluble organic solvent in the supercritical state; lowering the pressure in the chamber and changing the water soluble organic solvent in the supercritical state into a gas to discharge the water soluble organic solvent from the chamber; supplying an inactive gas into the chamber as the pressure in the chamber is lowered to the atmospheric pressure; and cooling the semiconductor substrate.

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Inventors:

SATO YOHEI
OGUCHI HISASHI
TOMITA HIROSHI
HAYASHI HIDEKAZU
JI LINAN

Application Number:

JP2011192594A

Publication Date:

March 21, 2013

Filing Date:

September 05, 2011

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/304; F26B5/04; F26B5/16

Attorney, Agent or Firm:

Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno

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