Title:
SUPERCRITICAL DRYING METHOD OF SEMICONDUCTOR SUBSTRATE AND DEVICE
Document Type and Number:
Japanese Patent JP2013062417
Kind Code:
A
Abstract:
To reduce particles generated on a surface of a semiconductor substrate.
A supercritical drying device of a semiconductor substrate according to an embodiment comprises: a chamber 210 which houses the semiconductor substrate and is capable of being sealed; a heater 212 which heats the inside of the chamber 210; a supply unit which supplies carbon dioxide to the chamber 210; a discharge unit which discharges carbon dioxide from the chamber 210; and a rotation unit 270 which rotates the chamber 210. The rotation unit 270 rotates the chamber 210 at 90° or higher and at 180° or lower in a horizontal direction.
Inventors:
OGUCHI HISASHI
HAYASHI HIDEKAZU
JI LINAN
SATO YOHEI
TOMITA HIROSHI
HAYASHI HIDEKAZU
JI LINAN
SATO YOHEI
TOMITA HIROSHI
Application Number:
JP2011200569A
Publication Date:
April 04, 2013
Filing Date:
September 14, 2011
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/304; F26B5/16
Attorney, Agent or Firm:
Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno