Title:
SUPERHIGH FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME
Document Type and Number:
Japanese Patent JPS57111051
Kind Code:
A
Abstract:
The impedance value of the semiconductor device usable at very high frequencies is preset during manufacture. The device comprises a Gunn or Zener diode coupled to a coaxial line. The central conductor of the line is constituted by a metal wire mandrel or a metal coating deposited on a glass fibre section. The outer cylinderical conductor is a cylindrical metal coating deposited on a ring of dielectric material, such as glass and which surrounds the diode. Application to microstrip, transmitting antenna and radial cavity circuits.
Inventors:
REIMON ANRI
MISHIERU ETSUMAN
MISHIERU ETSUMAN
Application Number:
JP12462881A
Publication Date:
July 10, 1982
Filing Date:
August 08, 1981
Export Citation:
Assignee:
THOMSON CSF
International Classes:
H01L47/02; H01L23/12; H01L23/66; H01L29/864; (IPC1-7): H01L23/12; H01L29/90; H01L47/02