PURPOSE: To greatly improve the sensitivity and achieve a very high speed operation by selecting a p-i-n type avalanche photodiode for a photoelectric conversion element and applying thereto a multiple superlattice structure which is obtained by alternately stacking semiconductor superlattice layers whose bandgaps are different from one another.

CONSTITUTION: A superlattice camera element comprises a p-type semiconductor substrate 11: an n+-impurity diffusion field 10 which will form a charge storage field; a multiple superlattice layer 90, wherein a superlattice quantum well layer 8 consisting, for example, of a GaAs layer and an AlXGa1-xAs superlattice quantum wall layer 9 both of whose bandgaps are different from one another are stacked alternately for a predetermined number: a p+-type layer 7 which will be formed on the multiple superlattice layer 90 to be a photoelectric conversion section; a control gate 13 which reads charges stored in an n+-type impurity diffusion layer 10; and an n+-type impurity diffusion layer 12 which transfers in the perpendicular direction an electron which is formed in a predetermined field on the surface of the p+ type semiconductor substrate 11 and transferred from the n+ type impurity diffusion layer 10. According to the constitution, a number of electrons can be stored by a small amount of injecting light, and the sensitivity of the image sensing element can be improved. Electron storing time can also be shortened, thereby achieving a very high speed operation.