To provide a semiconductor light-emitting element, wherein a light- emitting element is easily formed by using a semiconductor material which is difficult to be n-type or p-type, and is capable of for fast operation.
This semiconductor light-emitting element is a heterojunction pin-type diode semiconductor element provided with a genuine semiconductor i layer 20 provided with a superlattice structure, where a barrier layer 22 and a quantum well layer 21 are alternately laminated repeatedly. Here, a DC voltage source 33 for applying an electric field to electrodes 31 and 32 by applying a reverse-bias voltage Vb is provided so that a Γ1 level of the quantum well layer 21 and an X1 level of the barrier layer adjoining each other on a high- electric potential side resonance at a specified voltage application, while the X1 level and a Γ2 level of the quantum well layer on a high electric potential side resonance, electrons injected in the superlattice at electric field application cause collision ionization to generate secondary electrons/positive holes, while combination between electrons and positive holes takes place continuously for the electrons of Γ2 level to combine with the positive hole, for light-emitting comprising a wavelength shorter than a light-emitting wavelength which depends on the material of the quantum well layer.
OTANI NAOKI
EGAMI NORIFUMI
