To provide a surface acoustic wave device that improves both out-band attenuation adjacent to a pass band and that on more high-frequency side outside the pass band, and to provide a communication apparatus.

A first reference potential through conductor 17 is formed right under the first region of a ring electrode 12, and a second reference potential through conductor 18 is formed right under the second region of the ring electrode 12. The reference potential bus bar electrode of a second IDT electrode 2 is connected to a region which is a predetermined distance away from the first region 25 of the ring electrode 12, and the reference potential bus bar electrode of a fourth IDT electrode 4 is connected to a region which is a predetermined distance away from the second region 26 of the ring electrode 12.