Title:
SURFACE ACOUSTIC WAVE DEVICE ELEMENT
Document Type and Number:
Japanese Patent JPS54153545
Kind Code:
A
Abstract:
PURPOSE: To establish the surface acoustic device element excellent in the high frequency performance with low cost.
CONSTITUTION: The crossing comb type electrode 22 is formed on the piezoelectric substrate 2 with Al, and the SiO2 film 23 is formed on it as the insulation film, and further, the conductive layer 24 made of Al is formed. Next, after forming holes 25 to perform wire-bonding on the input and output terminals and ground terminals of the transducer with photo etching method, the part on the comb type electrode of the conductive layer 24 is removed. After that, the wire bonding is made with Al or the like, and the device element is sealed with mold resin.
Inventors:
YANAGISAWA KATSUAKI
Application Number:
JP6266978A
Publication Date:
December 03, 1979
Filing Date:
May 24, 1978
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H03H3/08; H03H9/145; H03H9/25; (IPC1-7): H03H3/00; H03H9/00; H03H9/26