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Title:
SURFACE ACOUSTIC WAVE DEVICE, OSCILLATOR, AND MODULE APPARATUS
Document Type and Number:
Japanese Patent JP2011166567
Kind Code:
A
Abstract:

To attain a surface acoustic wave device having excellent temperature characteristics and a sufficient electromechanical coupling coefficient.

A surface acoustic wave device 1 has: a sapphire substrate 10 having a C plane as a main surface; an aluminum nitride film 30 which is formed on a main surface 11 of the sapphire substrate 10; comb-like electrodes 21, 22 which are formed on the surface of the aluminum nitride film 30 to excite surface acoustic waves; and a silicon dioxide film 40 which covers the comb-like electrodes 21, 22 and the surface of the aluminum nitride film 30. The surface acoustic waves use a secondary mode of Sezawa waves. The relationship between a standardized film thickness KH-AIN of the aluminum nitride film 30 and a standardized film thickness KH-SiO2 of the silicon dioxide film 40 is set to an appropriate range, and thereby the surface acoustic wave device 1 having excellent temperature characteristics, a sufficient electromechanical coupling coefficient K2 required for excitation, and a high sonic velocity is provided.


Inventors:
KONO HIDEYASU
FUJIOKA SHINJI
Application Number:
JP2010028615A
Publication Date:
August 25, 2011
Filing Date:
February 12, 2010
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H03H9/145
Domestic Patent References:
JP2008244523A2008-10-09
JPH08316779A1996-11-29
JP2002237737A2002-08-23
JP2002152000A2002-05-24
JPH04109709A1992-04-10
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Kazuhiko Miyasaka



 
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