Title:
弾性表面波装置
Document Type and Number:
Japanese Patent JP5137828
Kind Code:
B2
Abstract:
A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and θ of the Euler angles (0°±5°, θ±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: −10×D+92.5−100×C≰θ≰37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729 D: duty C: thickness of the IDT electrode normalized using a wavelength λ.
Inventors:
Kenji Nishiyama
Takeshi Nakao
Michio Kadota
Takeshi Nakao
Michio Kadota
Application Number:
JP2008521129A
Publication Date:
February 06, 2013
Filing Date:
May 22, 2007
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H03H9/145; H03H9/25
Domestic Patent References:
| JP2001036378A | 2001-02-09 | |||
| JP2003008390A | 2003-01-10 | |||
| JP2003249835A | 2003-09-05 |
Foreign References:
| WO2004070946A1 | 2004-08-19 | |||
| WO2005034347A1 | 2005-04-14 |
Attorney, Agent or Firm:
Patent business corporation Miya saki, table of contents patent office