Title:
SURFACE ACOUSTIC WAVE DEVICE
Document Type and Number:
Japanese Patent JPH05110371
Kind Code:
A
Abstract:
PURPOSE: To eliminate spurious radiation at a high frequency range outside the frequency band of the surface acoustic wave device in which an interdigital electrode is formed on a lithium tetraborate single crystal substrate.
CONSTITUTION: In the surface acoustic wave device in which interdigital electrodes 20 having a couple of interdigital electrodes 22, 24 formed through the combination of electrode fingers 22a, 24a are formed on a lithium tetraborate single crystal substrate 10, a short-bar interval (d) of a couple of short-bars 22b, 24b interconnecting the electrode fingers 22a, 24b of a couple of the interdigital electrodes 22, 24 is selected to be within a range of 6λ≤d≤12λ, where λ is a wavelength of a surface acoustic wave.
Inventors:
ABE SHUSUKE
SAITO HISATOSHI
TOME TAKESHI
SAITO HISATOSHI
TOME TAKESHI
Application Number:
JP26583691A
Publication Date:
April 30, 1993
Filing Date:
October 15, 1991
Export Citation:
Assignee:
NIPPON MINING CO
International Classes:
H03H9/145; H03H9/25; H03H9/64; (IPC1-7): H03H9/145; H03H9/25; H03H9/64
Attorney, Agent or Firm:
Kitano Yoshito