To provide an SAW device with a stable temperature characteristic in which a peak temperature is obtained in the neighborhood of a normal temperature, and frequency charging amounts are small.
An IDT electrode 2 in which the width of an electrode line is about 3μm, electrode logarithm is 200 pairs, and the crossing width of the electrode is 50λ is provided an a 45° X-Z LBO piezoelectric substrate 1. The IDT electrode 2 forms an AL film by a vacuum evaporating method, and the AL film is formed as a comb electrode by a lift-off method. At the time of forming an SAW device D1 by providing each 100 pieces of reflectors 3 at the both end parts of the IDT electrode 2, and defining the normalized film width of the IDT electrode 2 as 0.016, a summit temperature is 27.5°C, and frequency changing amounts within a temperature range -30-80°C are about 500ppm.
FUNEMI MASAYUKI
ITO MIKI
OTSUKA KAZUHIRO
KATSUTA HIROHIKO
