To improve power resistance by laminating a first film composed of an Al film or a film composed by adding other elements to Al and a second film composed of metal whose diffusion coefficient to Al is larger than the self diffusion coefficient of Al.
An electrode formed on a substrate 1 is formed by laminating the first film 2 composed of the Al film or the film composed by adding at least one kind of the other element to Al and the second film 3 composed of the metal whose diffusion coefficient to Al is larger than the self diffusion coefficient of Al. In this manufacture, it is preferable to perform an electrode formation process and processes after the process under 200°C from the view point of micromizing the crystalline particle diameter of an electrode material. Thus, it is required to perform the lamination process of the electrode composed of a first layer 2 and a second layer 3 under the temperature as well. When it is lower than 200°C, the size of grains for constituting the electrode is made small, the migration resistance of this SAW element is improved and the power resistance is improved further.
| JP02037510 | MAGNETIC HEAD |
| JP63105966 | FORMATION OF FEALSI-ALLOY THIN FILM |
| JP07312448 | MAGNETORESISTANCE EFFECT ELEMENT |
Uchishiba, Hidema
Igata, Osamu
Sato, Yoshio
