To provide a surface-emitting laser array excellent in production stability and handleability.

The surface-emitting laser array 1 includes a plurality of surface-emitting lasers 10A to 10D oscillating at different wavelengths which are integrated on one substrate 11. The surface-emitting lasers 10A to 10D include mesas 100A to 100D which respectively have first multilayer film Bragg reflectors 102A to 102D, an active layer 103, a semiconductor layer 104, and a second multilayer film Bragg reflector 105. In the respective mesas 100A to 100D of the surface-emitting lasers 10A to 10D, the semiconductor layer 104 has an equal outside dimension in plan view from the side of the substrate, and a current injection region 104A surrounded by a current constriction region formed by oxidation of a part of the semiconductor layer 104 has approximately an equal area. The first multilayer film Bragg reflectors 102A to 102D of the mesas 100A to 100D have different thermal resistance values so that the surface-emitting lasers 10A to 10D oscillate at different wavelengths.