SURFACE-EMITTING SEMICONDUCTOR LASER, OPTICAL MODULE, AND LIGHT TRANSFER DEVICE

Title:

SURFACE-EMITTING SEMICONDUCTOR LASER, OPTICAL MODULE, AND LIGHT TRANSFER DEVICE

Document Type and Number:

Japanese Patent JP3738849

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser having a degree of freedom in its structure and containing a photodetector that can be driven at a high speed.
SOLUTION: The surface-emitting semiconductor laser 100 contains a light emitting element 140 and the photodetector 120 provided on the element 140 and having a light emitting surface 108. The light emitting element 140 is composed of a first mirror 102, an active layer 103 provided above the mirror 102, and a second mirror 104 provided above the active layer 103. The second mirror 104 is composed of first and second regions 104a and 104b. The second region 104b is in contact with the photodetector 120 and has a higher resistance than the first region 104a has.

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Inventors:

Tsuyoshi Kaneko

Application Number:

JP2003289049A

Publication Date:

January 25, 2006

Filing Date:

August 07, 2003

Export Citation:

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Assignee:

Seiko Epson Corporation

International Classes:

H01S5/026; H01S5/18; H01S5/00; H01S5/183; H01S5/30; (IPC1-7): H01S5/026; H01S5/183

Domestic Patent References:

JP9507339A
JP9199795A
JP2002504754A

Attorney, Agent or Firm:

Inoue Ichi
Yukio Fuse
Mitsue Obuchi
Tatsuya Ina
Takekoshi Noboru

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