PURPOSE: To provide a surface emitting semiconductor laser which can oscillate lasers with a low threshold current and besides can continuously oscillate easily at room temperature.

CONSTITUTION: This laser includes the first light reflecting layer 12, which has the first semiconductor multilayer film 7 one-forth as thick as optical wavelength constituted by stacking two kinds of semiconductor layers alternately and the first dielectric multilayer film 8 one-forth as thick as optical wavelength constituted by staking two kinds of dielectric layers alternately, an n-type clad layer 4, an active layer 5, a p-type clad layer 6, and the second reflecting layer 13, which has the second semiconductor multilayer film 3 one-forth as thick as optical length constituted by stacking two kinds of semiconductor layers alternately and a second dielectric multilayer film 11 one-forth as thick as optical wavelength constituted by stacking two kinds of dielectric layers alternately. And, the first dielectric multilayer film 8 of the first light reflecting layer 12 is fuse together to the dielectric film 9 on a substrate 10.