Title:
SURFACE POLISHING METHOD OF COMPOUND SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2013077661
Kind Code:
A
Abstract:
To provide a polishing method capable of obtaining a polishing surface of a compound semiconductor substrate composed of group 13 and group 15, having high surface flatness, small surface roughness, and such high quality as not to generate a fine scratch and a fine pit on a surface, and an affected layer, and achieving a high polishing speed.
The surface polishing method of a surface of a compound semiconductor substrate composed of group 13 and group 15 in a periodic table includes a step of mechanochemically polishing a surface of the compound semiconductor substrate using polishing slurry formed by containing an abrasive grain having magnesium oxide as a main component in an oxidant and an inorganic acid.
Inventors:
GOTO HAJIME
Application Number:
JP2011215797A
Publication Date:
April 25, 2013
Filing Date:
September 30, 2011
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
H01L21/304; B24B37/00
Attorney, Agent or Firm:
Hiroshi Okikawa
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