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Title:
SURFACE REFORMING METHOD AND SURFACE REFORMING DEVICE
Document Type and Number:
Japanese Patent JPH0215183
Kind Code:
A
Abstract:

PURPOSE: To allow adequate reforming and reinforcing of only the part of a large-sized structure by constituting a large-sized sample so as to constitute a part of a vacuum vessel and irradiating the sample surface on the vessel side with charge particles.

CONSTITUTION: The part to be worked of the large-sized structure 12 is supported by a sealing device 13 having a flexible structure in such a manner as to be exposed to an atmosphere 3 in the vessel so that the entire part in the vacuum vessel 1 is kept hermetic. A charge particle irradiation device 4 or an electron beam irradiation device is mounted in the vacuum vessel 1. Gas is introduced from a gas introducing port 19 into the vessel and a DC voltage is impressed between a filament 5 and the vessel 1 to form gaseous plasma. The metal 10 in a crucible 9 is evaporated. A voltage is impressed between drawing-out electrodes 7-1 and 7-2 and the positive charge ions are drawn out of the plasma into the atmosphere 3. The surface of the structure 12 is then irradiated with these ions. TiN, etc., are deposited on the partial surface of the structure 12 with the good adhesive property in such a manner.


Inventors:
NATSUI KENICHI
OHATA KOKICHI
SATO TADASHI
Application Number:
JP16262388A
Publication Date:
January 18, 1990
Filing Date:
July 01, 1988
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
C23F4/04; C23C14/22; (IPC1-7): C23F4/04
Domestic Patent References:
JPS58155250A1983-09-14
Attorney, Agent or Firm:
Kenjiro Take (1 person outside)