Title:
SURFACE TREATING SOLUTION FOR SEMICONDUCTOR SUBSTRATE AND METHOD AND DEVICE FOR TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE USING THE SOLUTION
Document Type and Number:
Japanese Patent JP3575859
Kind Code:
B2
Abstract:
PURPOSE: To flatten the surface of a semiconductor substrate so that the possibility of contamination of the surface of the substrate with a metallic impurity can be eliminated and particles can be removed from the surface of the substrate in the same way as that used for removing particles from the surface of an oxide film by using a mixed solution prepared by mixing an HF solution and ozone water at a specific mixing ratio for the surface treatment of the substrate.
CONSTITUTION: An ultrasonic diaphragm 16 for vibrating liquid chemical is provided in a treatment tank 11 and the irradiating timing of each liquid chemical is controlled by means of a computer 17 in the same way as that used for the supply of each liquid chemical. After wafers 12 are set in the tank 11, a mixed solution is prepared in the tank 11 by supplying an HF solution and ozone water to the tank 11 by opening the valves 19 and 20 of an HF supply line 13 and ozone water supply line 14. The concentrations of the HF solution and ozone water are respectively adjusted to 0.01-1% and 0.1-20ppm. When the tank 11 is filled up with the mixed solution of the HF solution and ozone water, the valves 19 and 20 are closed and the mixed solution is maintained as it is for about three minutes.
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Inventors:
Yuji Fukasawa
Kunihiro Miyazaki
Kunihiro Miyazaki
Application Number:
JP5097695A
Publication Date:
October 13, 2004
Filing Date:
March 10, 1995
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
B08B3/08; C09K13/08; C23F1/08; C23F1/24; C23G1/12; C23G3/00; H01L21/304; H01L21/306; H01L21/308; (IPC1-7): H01L21/304; B08B3/08; C23F1/08; C23F1/24; C23G3/00; H01L21/308
Domestic Patent References:
| JP4103124A | ||||
| JP3218015A |
Attorney, Agent or Firm:
Takehiko Suzue
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