SURFACE TREATMENT METHOD OF SEMICONDUCTOR

Title:

SURFACE TREATMENT METHOD OF SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH0677197

Kind Code:

A

Abstract:

PURPOSE: To achieve that a resist which has been denatured, contaminated or polymerized by an ion implantation operation, a dry etching operation or the like is removed with good efficiency.

CONSTITUTION: In a process wherein a treatment is executed by ultraviolet rays, ozone 1 and a gas containing a nitrogen oxide 2, a nitrogen oxide measuring process is installed. During an ashing operation, the nitrogen oxide is added while it is being monitored. Thereby, a resist which has been denatured, contaminated or polymerized by an ion implantation operation, a dry etching operation or the like can be removed with good efficiency. In addition, the title method can be applied in order to clean or the like the surface of a semiconductor substrate which does not contain any resist.

Inventors:

TSUNEKAWA SUKEYOSHI
KOIZUMI KOTARO
KIMURA TAKESHI
KAWASUMI KENICHI

Application Number:

JP22972692A

Publication Date:

March 18, 1994

Filing Date:

August 28, 1992

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/30; H01L21/027; H01L21/302; H01L21/304; H01L21/3065; (IPC1-7): H01L21/304; H01L21/027; H01L21/302

Attorney, Agent or Firm:

Ogawa Katsuo

Next Patent: REMOVAL APPARATUS OF ORGANIC SUBSTRATE