Title:
SUSCEPTOR, EPITAXIAL WAFER PRODUCTION APPARATUS AND EPITAXIAL WAFER PRODUCTION METHOD
Document Type and Number:
Japanese Patent JP2006124758
Kind Code:
A
Abstract:
To provide a susceptor, an epitaxial wafer production apparatus and an epitaxial wafer production method which enable the occurrence of an autodope phenomenon to be suppressed in production of the epitaxial wafer.
A susceptor 2 composing the production apparatus is composed of a first susceptor 21 and a second susceptor 22, and, in a state where the first susceptor 21 and the second susceptor 22 are combined, a prescribed gap is formed between the susceptors 21, 22. The gap is composed as a communication path 23 which, when a substrate wafer is mounted on the susceptor 2, allows a space part formed between the substrate wafer and the susceptor 2 to communicate with the outside of the susceptor 2.
Inventors:
IRIGUCHI KAZUHIRO
NASU YUICHI
MATSUNAGA HIDEYUKI
NASU YUICHI
MATSUNAGA HIDEYUKI
Application Number:
JP2004312885A
Publication Date:
May 18, 2006
Filing Date:
October 27, 2004
Export Citation:
Assignee:
KOMATSU DENSHI KINZOKU KK
International Classes:
C23C16/458; C01B33/02; H01L21/205; H01L21/683
Domestic Patent References:
| JP2001522142A | 2001-11-13 |
Foreign References:
| WO2005111266A1 | 2005-11-24 |
Attorney, Agent or Firm:
Kinoshita Minoru
Kanji Nakayama
Tsuyoshi Ishizaki
Kanji Nakayama
Tsuyoshi Ishizaki
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