To provide a switch device having a robust configuration against contamination due to film-like formation on the surface of a conductive fluid with oxygen and other impurities and suitable for the size of an integrated circuit.

In the switch device in which an electrode arranged near the center part and any of electrodes arranged near both ends of a pipe conduit are brought into conduction by heating any of heating means (heaters) to expand gas filled within a chamber and moving conductive fluid by its pressure, a metal film is arranged opposed to the electrode arranged near the center and at the same time, the electrode arranged near the center and the metal film are formed with a conductive material wettable with the conductive fluid, and the electrodes on both sides of the pipe conduit are formed with a conductive material less likely to be wettable with the conductive fluid.