To prevent attenuation of amplitude of a load capacity CMG voltage and to improve a rectangular wave characteristic while a jump from a CMG drive circuit of EM-CCD to an output signal of EM-CCD is reduced.
In a switching circuit, parallel connection of a ferrite bead and a diode is inserted between a logic buffer and gates of PchMOS and NchMOS, and the diode is connected in a direction where MOS is turned off. Conduction resistance between a drain and a source of PchMOS is 2 Ω or more, and a drain of PchMOS and a drain of NchMOS are connected by resistance of 1 Ω or more. The ferrite bead whose impedance in a switching fundamental frequency is lower than 1/2 of impedance of a capacitive load in the switching fundamental frequency is connected in series between the drain of PchMOS and the capacitive load.
NAKAMURA KAZUHIKO
KOGO KIYOTAKA
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