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Title:
スイッチング素子
Document Type and Number:
Japanese Patent JP4826254
Kind Code:
B2
Abstract:
The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150 DEG C.

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Inventors:
Kawakami Haruo
Hisato Kato
Keisuke Yamashiro
Kuroda Masami
Nobuyuki Sekine
Application Number:
JP2005505037A
Publication Date:
November 30, 2011
Filing Date:
February 17, 2004
Export Citation:
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Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L51/05; C07D495/04; G11C13/02; H01L27/28; H01L29/786; H01L29/80; H01L29/861; H01L49/02; H01L51/00; H01L51/30
Domestic Patent References:
JPS6370517A1988-03-30
JPH07121917A1995-05-12
JP2000143607A2000-05-26
JP2003228185A2003-08-15
Foreign References:
WO2002037500A12002-05-10
Attorney, Agent or Firm:
Shigeru Matsui



 
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