Title:
プラズマ処理源および基板バイアスの同期パルス化
Document Type and Number:
Japanese Patent JP7235761
Kind Code:
B2
Abstract:
Systems and methods for plasma processing are disclosed. A method includes applying power to a plasma processing chamber during a first processing step and generating, during the first processing step, a first plasma sheath voltage between a substrate and a plasma. During a second processing step (that follows the first processing step), power is applied to the plasma processing chamber and a different plasma sheath voltage is applied between the substrate and the plasma.
Inventors:
Fairbairn, Kevin
Shaw, Denise
Carter, Daniel
Shaw, Denise
Carter, Daniel
Application Number:
JP2020545044A
Publication Date:
March 08, 2023
Filing Date:
November 16, 2018
Export Citation:
Assignee:
AES Global Holdings, Private Limited
International Classes:
H05H1/46; C23C16/505; H01L21/3065
Domestic Patent References:
| JP2016500132A | ||||
| JP2004193564A | ||||
| JP2001525601A | ||||
| JP2012104382A | ||||
| JP2002050611A |
Foreign References:
| US20160126069 | ||||
| US20170154781 |
Attorney, Agent or Firm:
Shusaku Yamamoto
Morishita Natsuki
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto
Morishita Natsuki
Takatoshi Iida
Daisuke Ishikawa
Kensaku Yamamoto