To provide a system and a method for automatically changing the system of a laser base for processing a target sample such as a semiconductor wafer.
A system of a laser base detects a trigger related to a processing model. The processing model corresponds to a set of wafers. The system automatically adjusts one or more of system parameters based on the processing model in response to the trigger. The system selectively irradiates a structure on at least one wafer or in the wafer in the set of the wafers by using the changed system parameter. The trigger includes: a change in a heat state related to a movable stage. The system operates the movable stage by a series of movement up to reaching a heat balance threshold value in response to the change in the heat state. For example, the series of movement may be simulated from the movement used, for example, for processing a specific wafer.
VANDERGIESSEN CLINT
EITZEN DUANE
| JPH05261575A | 1993-10-12 | |||
| JP2004526577A | 2004-09-02 | |||
| JPH0443486U | 1992-04-13 | |||
| JPH02138087U | 1990-11-19 |
Sekiya Mitsuo
Toshiaki Watanabe
Hidekazu Matsumaru
Akira Yoshikawa
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