Title:
SYSTEM FOR QUANTIFYING UNEVENNESS CAUSED BY LASER CRYSTALLIZATION EQUIPMENT AND METHOD FOR QUANTIFYING UNEVENNESS CAUSED BY LASER CRYSTALLIZATION EQUIPMENT
Document Type and Number:
Japanese Patent JP2017005252
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a system and a method for quantifying unevenness.SOLUTION: The present invention provides a system for quantifying unevenness caused by laser crystallization equipment and a method for quantifying unevenness caused by laser crystallization equipment. In the system for quantifying unevenness caused by the laser crystallization equipment 10 including the laser crystallization equipment 100, a substrate 20 is crystallized by the laser crystallization equipment 100, and an unevenness quantification device 200 is formed inside the laser crystallization equipment 10 so that unevenness can be quantified in real time while moving the crystallized substrate 20.SELECTED DRAWING: Figure 1
Inventors:
SO YI BIN
CHO MIN YOUNG
CHO SANG HEE
KIM HYUN JUNG
KIM SUNG HWAN
CHO MIN YOUNG
CHO SANG HEE
KIM HYUN JUNG
KIM SUNG HWAN
Application Number:
JP2016113366A
Publication Date:
January 05, 2017
Filing Date:
June 07, 2016
Export Citation:
Assignee:
AP SYSTEMS INC
International Classes:
H01L21/66; B23K26/03; B23K26/352; H01L21/20; H01L21/268
Attorney, Agent or Firm:
Patent business corporation r&c