Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3243286
Kind Code:
B2
Abstract:
PURPOSE: To finish etching of gate electrode component films of different conductivities at the same period by injecting impurity ion to the gate electrode component films using a resist film as a mask, by removing the resist film and thereafter by removing an insulating film before etching it.
CONSTITUTION: A gate electrode component film 105 is formed on a surface of a semiconductor substrate 101, resist films 106, 120 are formed thereon and impurity ion is injected to the gate electrode component film 105 using the resist film as a mask; thereby, gate electrode component films 105a, 105b of different conductivities are provided. Then, the resist films 106, 120 are peeled off, insulating films 107, 108 existing on the gate electrode component films 105a, 105b are peeled off, the gate electrode component films 105a, 105b are etched and gate electrodes 110a, 110b are formed. Thereby, etching of electrode component films of different conductivities can be finished at almost the same time.
Inventors:
Akira Masaru Masaru
Nishiyama Akira
Toyota Morimoto
Hiroshi Ushihisa
Hiroshi Iwai
Nishiyama Akira
Toyota Morimoto
Hiroshi Ushihisa
Hiroshi Iwai
Application Number:
JP13904292A
Publication Date:
January 07, 2002
Filing Date:
May 29, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/28; H01L21/8238; H01L27/092; H01L29/417; H01L29/423; H01L29/43; H01L29/49; (IPC1-7): H01L21/8238; H01L21/28; H01L27/092; H01L29/43
Domestic Patent References:
| JP492416A |
Attorney, Agent or Firm:
Kazuo Sato (3 others)