To provide a tandem type silicon-based thin-film photoelectric conversion device excellent in stability with advantages that can avoid the generation of a defective part in a unit interface joining part, that can confine each wavelength band having predetermined sensitivity in each unit, and that has a high photoelectric conversion characteristic.
The tandem type silicon-based thin-film photoelectric conversion device is comprised of a plurality of photoelectric conversion units 23, 25 stacked as two stages on a substrate 21. The photoelectric conversion units 23, 25 has first conductive semiconductor layer 26, 31, silicon-based thin-film photoelectric conversion layers 27, 32 and second conductive semiconductor layer 28, 33, respectively. A composite oxide layer of indium oxide and tin oxide or two layers comprised of a tin oxide layer and a zinc oxide layer are interposed as an intermediate layer 24 between the photoelectric conversion units 23, 25.
MORITA SHOJI
KONDO KATSUHIKO
