Title:
TANTALUM COMPLEX AND SOLUTION RAW MATERIAL CONTAINING THE COMPLEX AND USED FOR ORGANIC METAL CHEMICAL VAPOR DEPOSITION METHOD AND TANTALUM-CONTAINING THIN FILM FORMED FROM THE SAME
Document Type and Number:
Japanese Patent JP2003335740
Kind Code:
A
Abstract:
To provide a solution raw material which is used for organic metal chemical vapor deposition and is uniformly and stably evaporated to give a desired highly pure tantalum-containing thin film at a large film-forming speed, and to provide the highly pure tantalum-containing thin film having an excellent barrier property as a substrate for a copper thin film.
This tantalum complex is represented by the general formula (1) (R is ethyl; R' is a 6 to 11C linear or branched alkyl).
More Like This:
| WO/2005/065398 | SYNTHESIS OF IONIC LIQUIDS |
| WO/1988/006149 | PLATINUM COMPLEXES, PROCESS FOR THEIR PRODUCTION AND DRUGS CONTAINING SAME |
| WO/2016/197234 | PREPARATION OF HIGH CONDUCTIVITY COPPER FILMS |
Inventors:
SAI ATSUSHI
OGI KATSUMI
OGI KATSUMI
Application Number:
JP2002139710A
Publication Date:
November 28, 2003
Filing Date:
May 15, 2002
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C07C211/65; C07F9/00; C23C16/34; H01L21/285; (IPC1-7): C07C211/65; C07F9/00; C23C16/34; H01L21/285
Attorney, Agent or Firm:
Masayoshi Suda