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Title:
TANTALUM COMPOUND, METHOD FOR PRODUCING THE SAME AND METHOD FOR FORMING TANTALUM-CONTAINING THIN FILM
Document Type and Number:
Japanese Patent JP2005132757
Kind Code:
A
Abstract:

To obtain a tantalum compound that has reactivity to water lower than that of a conventional tantalum compound and forms a tantalum-containing thin film by a CVD method and to provide a method for producing the same and a method for forming a tantalum-containing thin film using the compound.

The tantalum compound represented by formula 1 (R1 is a 1-3C alkyl; R2 is a 1-5C alkyl or a 3-4C trialkylsilyl; R3 is a 1-6C alkyl or a 3-4C trialkylsilylmethyl; R4 is methyl or ethyl; m is an integer of 0-5; n is an integer of 0-3; m+n is a number of ≤5; X and z are each chlorine, bromine or iodine; with the proviso that a case where R1 and R2 are each methyl and m+n=4 or 5 is omitted) is obtained by reacting a tantalum compound represented by formula 2 with an alkylmagnesium halide represented by general formula 3 R3MgX or an alkyllithium compound represented by formula 4 R3Li in an organic solvent. The tantalum-containing thin film is obtained by using the compound as a raw material.


Inventors:
Sekimoto, Kenichi
Oshima, Kensho
Yamakawa, Satoru
Tada, Kenichi
Application Number:
JP2003000368974
Publication Date:
May 26, 2005
Filing Date:
October 29, 2003
Export Citation:
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Assignee:
TOSOH CORP
SAGAMI CHEM RES CENTER
International Classes:
C07F9/00; C23C16/34; H01L21/28; H01L21/285; (IPC1-7): C07F9/00; C23C16/34; H01L21/28; H01L21/285