To provide a temperature detection circuit which can be manufactured in a MOS production process and in which a temperature coefficient can be changed easily, and to provide a test method for the temperature detection circuit which can make a test without changing a temperature actually.

All collectors of PNP bipolar transistors 31, 32, 43. 44 are connected to a negative power supply 33. As a result, a temperature detection circuit can be manufactured in a MOS production process by using a substrate PNP wherein a P-type semiconductor substrate is used as a collector, an N-well region is used as a base and a P+ region is used as an emitter. In an operational amplifier circuit 40, its output is negatively fed back through a part across the gate and the drain of a P-channel MOS transistor 35 and the drain current ID of a P-channel MOS transistor 36 is proportional to absolute temperature T. When the resistance value of a fourth resistance 41 is changed, the temperature coefficient of an output voltage Vo can be changed.