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Title:
TEMPERATURE DETECTOR ON INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP3131129
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To realize a temperature detector, which is capable of generating signals detecting that the temperature of an integrated circuit exceeds a threshold temperature by a method, wherein the temperature detector is equipped with two MOS transistors of the same conductivity-type, special voltage applying means and a current comparison means which are both prescribed.
SOLUTION: A temperature detector is equipped with first and second MOS transistors of the same conductivity-type, Q1 and Q2. Furthermore, the detector is equipped with a voltage-applying means T1, which is capable of applying to the second transistor Q2 a gate-source voltage higher than that of the first transistor Q1 by a Vbe (Vbe denotes an inter-terminal voltage drop of a forward- biased p-n junction). Moreover, a current comparator which compares currents that flow through the transistors Q1 and Q2 respectively with each other is provided. For instance, a first current source SC1 connected to the transistor Q1 in series for giving a prescribed current to the transistor Q1 and a second current source SC'1 which copies the current I1 of the first current source SC1 in accordance with a certain proportional constant are provided.


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Inventors:
Alexandre Marelub
Application Number:
JP24662395A
Publication Date:
January 31, 2001
Filing Date:
August 31, 1995
Export Citation:
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Assignee:
STMicroelectronics Society Anonymous
International Classes:
G01K7/00; G01K3/00; G01K7/01; H01L21/66; H01L21/822; H01L27/04; H02H5/04; (IPC1-7): H01L21/66; G01K7/00; G01K7/01; H01L21/822; H01L27/04
Domestic Patent References:
JP63245118A
Attorney, Agent or Firm:
Takashi Koshiba