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Title:
温度測定方法
Document Type and Number:
Japanese Patent JP6459046
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a temperature measurement method capable of precisely measuring temperature of a semiconductor light-emitting element.SOLUTION: The temperature measurement method is a method of measuring temperature of a semiconductor light-emitting element 12 formed with a semiconductor light-emitting layer 125 over a principal plane 121a of a substrate 121. The temperature measurement method includes the steps of: irradiating the semiconductor light-emitting element 12 with a laser beam of a wave length which is larger than the wave length equivalent to an energy of band gap of a layer which has the smallest band gap in the layers included in a semiconductor light-emitting element 12; and measuring the temperature of the semiconductor light-emitting element 12 based on a raman spectroscopic analysis of a scattered light emitted from the semiconductor light-emitting element 12 due to the irradiation of the laser beam.

Inventors:
Yuu Manabe
Makoto Kai
Makoto Horiuchi
Yukihiko Yamagata
Kentaro Tomita
Application Number:
JP2014265590A
Publication Date:
January 30, 2019
Filing Date:
December 26, 2014
Export Citation:
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Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
G01K11/32; G01B11/16; H01L33/64
Domestic Patent References:
JP6094545A
JP2003031634A
JP2012212862A
JP2013229638A
Attorney, Agent or Firm:
Patent business corporation Nakajima intellectual property integrated office



 
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