TEMPERATURE MEASURING METHOD OF SEMICONDUCTOR WAFER

Title:

TEMPERATURE MEASURING METHOD OF SEMICONDUCTOR WAFER

Document Type and Number:

Japanese Patent JP05335397

Kind Code:

A

Abstract:

PURPOSE: To accurately measure a change in the temperature of an Si wafer in a low-temperature etching operation.

CONSTITUTION: An Si wafer 1 is held in a state that it has been pressed to a stopper 3 on a sample stage; a change in the size of the Si wafer is detected by means of a laser interferometer 5. Data on the detection of the laser interferometer 5 is sent to an operation part 20; the temperature of the Si wafer is operated and found on the basis of the known coefficient of thermal expansion of Si. Thereby, the noise of the title measuring method is smaller than that of a method which detects infrared rays form the Si wafer 1 and the accuracy of the title measuring method is higher than that of a direct measuring method which detects the temperature of the sample stand by means of a thermocouple or the like.

Inventors:

Itakusu, Motokuni

Application Number:

JP1992000164059

Publication Date:

December 17, 1993

Filing Date:

May 29, 1992

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NIPPON STEEL CORP

International Classes:

G01B9/02; G01K5/50; H01L21/302; H01L21/3065; H01L21/66; G01B9/02; G01K5/00; H01L21/02; H01L21/66; (IPC1-7): H01L21/66; G01B9/02; G01K5/50; H01L21/302

Previous Patent: SEMICONDUCTOR DEVICE FOR TEST AND ITS TESTING METHOD

Next Patent: COMPARISON AND VERIFICATION APPARATUS