Title:
TERTIARY STRUCTURE BODY COMPOSED OF SILICON FINE THREAD, METHOD FOR MANUFACTURING STRUCTURE, AND DEVICE USING STRUCTURE
Document Type and Number:
Japanese Patent JP2004058267
Kind Code:
A
Abstract:
To provide a tertiary structure body composed of reliable fine silicon thread, a method for manufacturing the structure and a device using the structure.
Wire 2 of nano or micron order is formed by carrying out wet etching on the tertiary structure body composed of silicon fine thread in use of crystallinity of single crystal material.
Inventors:
Kawakatsu, Hideki
Kobayashi, Masaru
Kobayashi, Masaru
Application Number:
JP2003000151255
Publication Date:
February 26, 2004
Filing Date:
May 28, 2003
Export Citation:
Assignee:
JAPAN SCIENCE & TECHNOLOGY CORP
International Classes:
G01G3/16; B01J20/28; B81B1/00; B81C1/00; B82B1/00; B82B3/00; G01K7/16; G01L1/10; G01N1/00; G01Q30/10; G01Q30/20; G01Q60/24; G01Q60/38; G01Q60/54; G01R33/02; (IPC1-7): B82B1/00; B82B3/00; G01G3/16; G01K7/16; G01L1/10; G01N13/16; G01R33/02; G12B21/08
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