TERTIARY STRUCTURE BODY COMPOSED OF SILICON FINE THREAD, METHOD FOR MANUFACTURING STRUCTURE, AND DEVICE USING STRUCTURE
Document Type and Number:
Japanese Patent JP2004058267
To provide a tertiary structure body composed of reliable fine silicon thread, a method for manufacturing the structure and a device using the structure.
Wire 2 of nano or micron order is formed by carrying out wet etching on the tertiary structure body composed of silicon fine thread in use of crystallinity of single crystal material.
February 26, 2004
May 28, 2003
JAPAN SCIENCE & TECHNOLOGY CORP
G01G3/16; B01J20/28; B81B1/00; B81C1/00; B82B1/00; B82B3/00; G01K7/16; G01L1/10; G01N1/00; G01Q30/10; G01Q30/20; G01Q60/24; G01Q60/38; G01Q60/54; G01R33/02; (IPC1-7): B82B1/00; B82B3/00; G01G3/16; G01K7/16; G01L1/10; G01N13/16; G01R33/02; G12B21/08