熱原子層エッチングプロセス

Title:

熱原子層エッチングプロセス

Document Type and Number:

Japanese Patent JP7161024

Kind Code:

B2

Abstract:

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

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Inventors:

Bromberg Tom E.
Ju Chi Yu
Tuominen Marco Jay.
Haukka Svippy.
Sharma Varun

Application Number:

JP2021214437A

Publication Date:

October 25, 2022

Filing Date:

December 28, 2021

Export Citation:

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Assignee:

ASP Holding B.V.

International Classes:

H01L21/302; H01L21/3065

Domestic Patent References:

JP2015032597A
JP10150024A
JP2015533029A

Foreign References:

WO2016172740A2

Attorney, Agent or Firm:

Takashi Onodera

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