PURPOSE: To obtain a highly reliable thermal head eliminating poor grounding by forming an insulator by sputtering method with a heat generating resistor and/or a conductive metal wire held at an earth potential.
CONSTITUTION: An undercoat film 2 is formed entirely on an alumina substrate 1 as insulating substrate and then, a 0.1μm thick heat generating resistor 3 made of a Cr-Si alloy and a 1.5μm Al conductors 4 and 6 are formed in a specified pattern. Then, an auxiliary electrode terminal 8 is formed in a specified pattern. The substrate 12 thus laminated and patterned is set on a sputtering device 9 and SiO2 as insulator 5 is formed at the thickness of about 3.5μm by sputtering method. In addition, Si3N4 is formed at the thickness of 1.0W2.0μm by plasma CVD method thereon and a contact through hole is formed in the Si3N4/SiO2 double-layer film.
TAMURA KATSU
NUNOKAWA ISAO
FUNIYUU MASAO
HANAZONO MASANOBU
MIYAKE HIROSHI
SATOU AKIRA