THERMAL INFRARED DETECTOR AND THERMAL INFRARED SENSOR

Title:

THERMAL INFRARED DETECTOR AND THERMAL INFRARED SENSOR

Document Type and Number:

Japanese Patent JP2007225398

Kind Code:

A

Abstract:

To achieve a highly-sensitive thermal infrared sensor by improving the heat-insulating properties of a sensor pixel using a bipolar transistor.

The bipolar transistor (402) and a constant current source (401) having temperature dependence are arranged within sensor pixels (102a, 102b). The constant current source is arranged between the collector and base of the bipolar transistor. The wiring part of the collector of the bipolar transistor (402) and one electrode of the constant current source (401) is supported by a common supporting leg, while the emitter wiring of the bipolar transistor is supported by another supporting leg, thereby reducing the number of the supporting legs of a pixel part to two and improving the heat-insulating properties.

Inventors:

UENO MASAFUMI
OTA YASUAKI

Application Number:

JP2006045722A

Publication Date:

September 06, 2007

Filing Date:

February 22, 2006

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

G01J1/02; G01J1/44; G01J5/48; H01L37/00

Domestic Patent References:

JPH04294692A

1992-10-19

Foreign References:

WO1999031471A1

1999-06-24

Attorney, Agent or Firm:

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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