To improve the detection sensitivity of a thermal photodetector.
A thermal photodetector comprises: a substrate 20; a support member 215 supported with respect to the substrate across a cavity 102; a heat-detecting element 220 formed on the support member; a first light-absorbing layer 270 that is formed on the heat-detecting element 220 and the support member 215 and contacts the heat-detecting element 220; and a second light-absorbing layer 272 that is formed on the first light-absorbing layer 270, contacts the first light-absorbing layer 270, and has a refractive index higher than that of the first light-absorbing layer. A first wavelength resonates between a surface of the support member 215 and an upper surface of the second light-absorbing layer 272, and a second wavelength different from the first wavelength resonates between the interface RL where the first light-absorbing layer 270 contacts the second light-absorbing layer 272 and an upper surface of the second light-absorbing layer 272.
JP2001153722A | 2001-06-08 | |||
JP2008232896A | 2008-10-02 |
Takekoshi Noboru
Yasushi Kuroda