Title:
THERMALLY-ASSISTED MAGNETIC MEMORY STRUCTURE
Document Type and Number:
Japanese Patent JP2005123611
Kind Code:
A
Abstract:
To provide a thermally-assisted magnetic memory structure and its manufacturing method.
The thermally-assisted magnetic memory structure is composed of a first conductor (120) surrounded by cladding (110), a memory cell (170) thermally separated from the first conductor (120) by a thermal resistance region (130), and a second conductor (180) which electrically comes into contact with the memory cell (170).
Inventors:
ANTHONY THOMAS C
BHATTACHARYYA MANOJ K
WOLMSLEY ROBERT G
BHATTACHARYYA MANOJ K
WOLMSLEY ROBERT G
Application Number:
JP2004294831A
Publication Date:
May 12, 2005
Filing Date:
October 07, 2004
Export Citation:
Assignee:
HEWLETT PACKARD DEVELOPMENT CO
International Classes:
G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): H01L27/105; G11C11/15; H01L43/08
Attorney, Agent or Firm:
Satoshi Furuya
Takahiko Mizobe
Kiyoharu Nishiyama
Takahiko Mizobe
Kiyoharu Nishiyama