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Title:
熱電変換素子
Document Type and Number:
Japanese Patent JP6414137
Kind Code:
B2
Abstract:
A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6≤x≤0.7, and a first n-type dopant.

Inventors:
Hiroyuki Sudo
Yamamoto Eiya
Application Number:
JP2016097273A
Publication Date:
October 31, 2018
Filing Date:
May 13, 2016
Export Citation:
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Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L35/14; C22C23/00; H01L35/26; H01L35/34; H02N3/00
Domestic Patent References:
JP38022610B1
JP4101471A
JP2017175122A
Foreign References:
KR1020130130461A
Other References:
Wei Liu et al.,Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance of n-Type Mg2Si1-xSnx Solid Solutions,Physical Rewiew Letters,米国,American Physical Society,2012年 4月18日,PRL 108,166601-1 - 166601-5
Attorney, Agent or Firm:
Atsushi Aoki
Jun Tsuruta
Tetsuji Koga
Nobuo Sekine
Masaharu Konoue



 
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