To provide a thermoelectric conversion module for obtaining higher a thermoelectric conversion characteristic which is reduced in the number of manufacturing steps, and also provide a method of manufacturing the module.
Thermoelectric conversion semiconductor raw material powder 21', 23' formed of p-type and n-type FeSi2-system semiconductors and the predetermined metal plate or powder 22' placed as a layer between the powder are put into a sintering die 3. These elements are sintered and joined only in a single stage by a discharging plasma sintering method. At the time of the sintering and joining, the diffusion of impurity atoms to the n-type from the p-type and to the p-type from the n-type are controlled due to the existence of a metal layer and a clear joining interface can be attained for the diffusion of impurity atoms between the p-type and n-type semiconductors. Moreover, since each raw material powder is sintered and joined only in the single stage, the manufacturing cost of the thermoelectric conversion module can be reduced remarkably.
OKUZAKI SHUNICHI
NUMATA MASASHI
AZUMA YUKIHIRO
YASUNO TAKUYA
TANAKA KATSUYUKI
| JP2001217469A | 2001-08-10 | |||
| JP2001189497A | 2001-07-10 | |||
| JP2007324500A | 2007-12-13 |
Toshio Takamatsu