To provide a thermoelectric element module in which p-type and n-type thermoelectric semiconductor elements can freely be arranged, the interval between the thermoelectric semiconductor elements is narrowed, the elements are miniaturized and which is arranged in high density, and to provide a manufacturing method of the module.

In the thermoelectric module, the thermoelectric elements are formed on a pressure sensitive adhesive sheet whose adhesive power drops when light is radiated. They are cut on the sheet and they are irradiated with light through a prescribed pattern film. The thermoelectric elements are shifted to a transfer material. The p-type elements in prescribed arrangement are formed. The n-type elements are similarly transferred on the transfer material and the p-type and n-type elements in prescribed arrangement are formed on the transfer material. The p-type and n-type semiconductor elements are bonded to an insulating substrate where an electric circuit metal layer is formed. The module is formed of a plurality of π-type thermoelectric elements which are sandwiched with two insulating substrates and which are electrically coupled in series.