Title:
THERMOELECTRIC MATERIAL
Document Type and Number:
Japanese Patent JP2011034997
Kind Code:
A
Abstract:
To provide a thermoelectric material which has high electrical conductivity and low thermal conductivity, in an oxide semiconductor having a perovskite structure.
The thermoelectric material is composed of the oxide semiconductor having the perovskite structure expressed by one of composition formula A1-xSquarex/3L2x/3BO3, composition formula A1-xLa2x/3Squarex/3BO3 and composition formula L1-x-yAxSquareyBO3. Here, Square represents a lattice defect, and L is La or Ln. An "A"site is doped with the La or Ln to improve electrical conductivity. Further, the "A" site includes the lattice defect to reduce the thermal conductivity by lattice vibration.
Inventors:
YAMAMURA HIROSHI
KAWAKAMI HIROSHI
ANZAI MAYUKA
KAWAKAMI HIROSHI
ANZAI MAYUKA
Application Number:
JP2009176821A
Publication Date:
February 17, 2011
Filing Date:
July 29, 2009
Export Citation:
Assignee:
UNIV KANAGAWA
International Classes:
H01L35/22; C01B35/12; C04B35/00; H01L35/34; H02N11/00
Attorney, Agent or Firm:
Onuki Kotake International Patent Office
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