マグネシウム、珪素、スズからなる熱電半導体およびその製造方法

Title:

マグネシウム、珪素、スズからなる熱電半導体およびその製造方法

Document Type and Number:

Japanese Patent JP5079559

Kind Code:

B2

Abstract:

To easily manufacture a thermoelectric semiconductor having a p-type thermoelectric characteristic, when sintering and manufacturing the thermoelectric semiconductor expressed by chemical formula: MgXSi1-YSnYwith single phase excellent performance characteristics composed of the metals of Mg, Sn and Si.

In a chemical composition of an intermetallic compound of MgXSi1-YSnY, a sintered compact composition X, Y has the p-type conduction thermoelectric characteristic, in the range of 1.98≤X≤2.01, and 0.72≤Y≤0.95. A semiconductor having the thermoelectric characteristic can be manufactured.

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Inventors:

Yukihiro Isoda
Kaichi Shinohara
Yoshio Imai
Takahiro Nagai
Hirofumi Fujio

Application Number:

JP2008072838A

Publication Date:

November 21, 2012

Filing Date:

March 21, 2008

Export Citation:

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Assignee:

National Institute for Materials Science
Mitsuba Co., Ltd.

International Classes:

H01L35/34; C22C1/04; C22C23/00; H01L35/14

Other References:

R. B. Song et al.,Synthesis of Mg2Si1-xSnx solid solutions as thermoelectric materials by bulk mechanical alloying and hot pressing,Materials Science and Engineering B,2007年 1月25日,Vol.136,p.111-117

Attorney, Agent or Firm:

Tetsuo Hirose

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