Title:
Thermoelectrical material and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP5944711
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a thermoelectric material superior in characteristics in view of conductivity, Seebeck coefficient, etc., and a method for manufacturing the thermoelectric material readily.SOLUTION: The method for manufacturing a thermoelectric material having a compound expressed by MgX doped with Li comprises: the process for mixing together and baking a raw material including Mg, X (X is at least one element selected from a group consisting of Si, Ge and Sn), and Li. The raw material includes a solid solution of Mg or at least one element of X, and Li.
Inventors:
Atsushi Watanabe
Application Number:
JP2012066410A
Publication Date:
July 05, 2016
Filing Date:
March 22, 2012
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
H01L35/14; C22C1/04; C22C13/00; C22C23/00; C22C28/00
Domestic Patent References:
| JP2010037641A | ||||
| JP2007146283A | ||||
| JP2010050185A | ||||
| JP2011249742A |
Other References:
Y.ISODA et al.,Thermoelectric Properties of p-type Mg2.00Si0.25Sn0.75 with Li and Ag Double Doping,Journal of Electronic Materials,2010年,Vol.39, No.9,pp.1531-1535
Attorney, Agent or Firm:
Shinki Global IP Patent Corporation