To provide a thermopile type infrared detecting element having a structure which can enhance integration density of thermocouples and also can achieve high sensitivity without complicated operation processes.

The thermopile type infrared detecting element includes: a first device element 100 which has first silicon needles 140 formed by a VLS crystalline growth method and first contact pads 150 on a plurality of N-doped first diffusion layers 120 arranged on one surface side of a first silicon substrate 110; and a second device element 200 which has second silicon needles 240 formed by the VLS crystalline growth method and second contact pads 250 on a plurality of P-doped second diffusion layers 220 arranged on one surface side of a second silicon substrate 210. The first device element 100 and second device element 200 face each other, the first silicon needles 140 and the second contact pads 250 are connected, and the second silicon needles 240 and the first contact pads 150 are connected.