PURPOSE: To produce the title thermosensitive resistor suitable for the practical resistance value as a thermistor by forming an amorphous film consisting of Si, C, Ta, etc., on the surface of a porcelain substrate by sputtering.

CONSTITUTION: A sheet consisting of high-purity SiC and ≥1 kind among Ta, Ni, Cr, Fe, etc., (expressed Ta, etc., hereunder) is placed on the cathode target in a high-frequency sputtering device, and the porcelain substrate set in a rotating cylindrical basket is arranged in opposition to the target. An inert gas such as Ar is introduced into the device, the device is kept at a specified vacuum, a high-frequency electric power is impressed to heat a substrate holder, etc., and hence to keep the porcelain substrate at about 300W400°C, and sputtering is carried out. As a result, the amorphous film 1 consisting of the Ta, etc., C, and Si is formed. The material is then heat-treated at a specified temp., an electrode cap 2 of stainless steel is put on both ends, and the film 1 is helically cut to form a spiral groove 3.