PURPOSE: To hold the temperature in a thermostatic chamber constant by controlling the current flowing through a transistor (TR), coupled thermally with the thermostatic chamber according to fluctuations in the temperature in the thermostic chamber, and heating the thermostatic chamber through the generation of heat of the TR due to collector loss.
CONSTITUTION: According to fluctuations of the temperature in a thermostatic chamber, an input voltage to a C-MOS gate G varies to turn on and off a transistor TR1, but the generation of heat of a TR3 coupled thermally with the thermostatic chamber, due to collector loss is utilized for heating. Further, a TR4 is added to limit a current flowing during the starting of the thermostic chamber. Consequently, the power consumption of the TR3 is all transduced into heating power, so the heating efficiency is improved greatly.
| WO/1994/011763 | HIGH TEMPERATURE STABILIZED TIME BASE |
| JPS5490474 | MICROWAVE DEVICE FOR STABILIZING TEMPERATURE |
| JP2000223947 | CRYSTAL OSCILLATOR |
TAKEUCHI MUTSUO
TAKAYAMA YASUO
