Title:
THIN FILM CAPACITIVE DEVICE
Document Type and Number:
Japanese Patent JP2016032015
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film capacitive device with a high Q value.SOLUTION: A thin film capacitive device 1 comprises: a substrate 2; and a capacitance lead-out part 8 provided on the substrate 2. The capacitance lead-out part 8 has a thin film 3 including a composition produced by doping a barium strontium titanate expressed by the general formula, (Ba,Sr)TiO(where 0
Inventors:
KISHIMOTO YUTAKA
Application Number:
JP2014153546A
Publication Date:
March 07, 2016
Filing Date:
July 29, 2014
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
H01G7/06; H01L21/822; H01L27/04
Domestic Patent References:
| JPH09205036A | 1997-08-05 | |||
| JP2009177171A | 2009-08-06 | |||
| JP2011134553A | 2011-07-07 | |||
| JPH0832027A | 1996-02-02 | |||
| JPH05291074A | 1993-11-05 | |||
| JP2002020167A | 2002-01-23 | |||
| JPS58188121A | 1983-11-02 |
Attorney, Agent or Firm:
Patent business corporation Miya saki, table of contents patent office
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